SI3948DV-T1-GE3

Description：MOSFET 2N-CH 30V 6TSOP
Series：TrenchFET®

SKU:dbf6cc1614ce Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 6TSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：105mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.15W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：6-TSOP
Grade：-
Qualification：-

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SI3948DV-T1-GE3

Overview

The Vishay Siliconix Si3948DV-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a continuous drain current of ±2.5 A at 25 °C, with an on-state resistance of 0.105 Ω at VGS = 10 V and 0.175 Ω at VGS = 4.5 V. Packaged in a TSOP-6 surface-mount configuration, it supports a maximum power dissipation of 1.15 W at 25 °C.

Feature Summary

Dual N-channel architecture integrating two independent transistors in a single package
TrenchFET power MOSFET technology for optimized performance
Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

DC-DC converter circuits
Power management modules
Load switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm halogen-free status. Confirm that the component meets RoHS Directive 2002/95/EC requirements for your project. Ensure the supplier provides valid traceability data matching the manufacturer's specifications.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching. Evaluate the thermal resistance ratings against your board layout constraints. Verify that the gate charge characteristics align with your driver capabilities for optimal switching efficiency.

Part Context

This part belongs to the Vishay Siliconix Si3948 series of dual MOSFETs. It utilizes the TSOP-6 package to provide a space-efficient alternative to discrete components. The product line emphasizes compliance with environmental directives while maintaining robust electrical performance for general-purpose switching tasks.

Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives. Verify that any substitute maintains identical voltage ratings, current handling capabilities, and package dimensions to ensure seamless integration without circuit redesign.

FAQ

What is the maximum pulsed drain current for the Si3948DV?

The maximum pulsed drain current (IDM) is ±8 A, measured with a pulse width of 10 µs.

Does the Si3948DV support synchronous rectification?

Yes, the internal body diode characteristics, including forward voltage and reverse recovery time, make it suitable for synchronous rectification applications.