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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 2.7A 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.7A
- Rds On (Max) @ Id, Vgs：115mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：250pF @ 10V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI3951DV-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology. It features a -20 V drain-source voltage and a maximum continuous drain current of -2.7 A at 25 °C case temperature. The device exhibits an on-state resistance of 0.115 Ω at VGS = -4.5 V and -2.5 A, with a typical total gate charge of 3.2 nC. Packaged in a TSOP-6 surface-mount configuration, it supports an operating junction temperature range from -55 °C to +150 °C.
Feature Summary
- Dual P-channel architecture integrating two independent transistors within a single package
- TrenchFET power MOSFET structure optimized for PWM applications
- Halogen-free construction compliant with IEC 61249-2-21 standards
Applications
- Load switching circuits for portable electronic devices
- Power amplifier (PA) switching applications
- General-purpose low-voltage power management
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. The GE3 designation indicates lead-free and halogen-free manufacturing. Confirm that the TSOP-6 package dimensions align with the target PCB footprint before finalizing procurement orders.
Selection Notes
Select this component when a compact dual P-channel solution is required for low-voltage systems. Ensure the thermal design accommodates the specified junction-to-ambient resistance values under steady-state conditions. Validate that the gate drive voltage meets the minimum threshold for optimal RDS(on) performance.
Part Context
This part belongs to the Vishay Siliconix Si3951 series of dual P-channel MOSFETs. It shares the TSOP-6 package form factor with other components in the family but differs in electrical ratings and internal transistor configurations. The series targets space-constrained portable applications requiring efficient power switching.
Replacement Considerations
Direct substitutes include the Si3951DV-T1-E3 variant, which maintains identical electrical characteristics but lacks the explicit halogen-free certification associated with the GE3 suffix. Verify pinout compatibility and thermal parameters when considering alternative packages.
