SI4288DY-T1-GE3

Overview

The Vishay Siliconix SI4288DY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage (VDS) of 40 V and a gate-source voltage (VGS) rating of ±20 V. The device supports a continuous drain current (ID) of 9.2 A at TC = 25 °C. On-state resistance (RDS(on)) is specified at 0.020 Ω at VGS = 10 V and 0.023 Ω at VGS = 4.5 V. Total gate charge (Qg) is typically 10 nC at VGS = 10 V. Operating junction temperature ranges from -55 °C to +150 °C, with maximum power dissipation rated at 3.1 W at TC = 25 °C.

Feature Summary

• Dual N-channel configuration within a single SO-8 package for space-efficient circuit design.
• TrenchFET Power MOSFET technology providing low on-state resistance and optimized switching performance.
• Compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free definitions.

Applications

• CCFL Inverter
• DC/DC Converter
• HDD

Procurement Notes

Verify the component against official Vishay datasheet Document Number 67078 to confirm technical specifications and pinout alignment. Ensure that the ordering suffix matches the required lead-free and halogen-free status as defined by the manufacturer. Cross-reference the specific revision date to validate compliance with current environmental directives before finalizing procurement decisions.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage applications up to 40 V. Evaluate thermal management requirements based on the 3.1 W power dissipation limit at 25 °C case temperature. Consider the 0.020 Ω RDS(on) for efficiency optimization in DC/DC converter topologies where conduction losses are critical.

Part Context

This part belongs to the Vishay Siliconix SI4 series of TrenchFET MOSFETs. It is designed for surface-mount assembly using the standard SO-8 (Narrow) JEDEC package format. The dual configuration allows for independent control of two channels within a footprint comparable to a single discrete transistor, facilitating balanced bridge or high-current parallel configurations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing PCB footprints and thermal constraints if considering alternative dual N-channel MOSFETs from other manufacturers.

FAQ

What is the maximum pulsed drain current for the SI4288DY?

The maximum pulsed drain current (IDM) is 50 A with a pulse width of 10 µs.

Does the SI4288DY include avalanche energy ratings?

Yes, the single pulse avalanche energy (EAS) is rated at 5 mJ with an inductance of 0.1 mH.

What is the body diode reverse recovery time?

The body diode reverse recovery time (trr) is typically 15 ns and maximally 30 ns under specified test conditions.