SI4501ADY-T1-E3

Overview

The SI4501ADY-T1-E3 is a complementary MOSFET pair manufactured by Vishay Siliconix, housed in an SOIC-8 surface-mount package. The device integrates one N-channel and one P-channel TrenchFET power MOSFET to facilitate half-bridge configurations. Key electrical parameters include a drain-source voltage rating of -40V for the N-channel and +40V for the P-channel variant. The N-channel unit features a maximum on-resistance of 0.025 ohms at a gate drive of 10V, while the P-channel counterpart exhibits a maximum on-resistance of 0.035 ohms under identical conditions. Both transistors are rated for a continuous drain current of 10A at room temperature.

Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs in a single compact package to reduce board space and simplify assembly.

Applications

• Synchronous rectification in DC/DC converter circuits.

Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm RoHS compliance status via official datasheets before integration. Check for end-of-life notifications or obsolescence warnings from the manufacturer to ensure long-term supply stability for production runs.

Selection Notes

Select this component when a matched pair of low-voltage power switches is required for high-efficiency power stages. Ensure the thermal management design accommodates the combined power dissipation of both die within the SOIC-8 footprint. Verify that the gate drive voltage levels align with the specified thresholds for optimal Rds(on) performance.

Part Context

This part belongs to the SI4xxx series of discrete and paired MOSFETs from Vishay Siliconix. It utilizes the proprietary TrenchFET technology to achieve low specific on-resistance. The SOIC-8 packaging allows for automated surface-mount placement, making it suitable for consumer electronics and industrial power supplies requiring compact form factors.

Replacement Considerations

SI4501ADY-E3