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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V/8V 6A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V, 8V
- Current - Continuous Drain (Id) @ 25°C：6A, 3.8A
- Rds On (Max) @ Id, Vgs：18mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4505DY-T1-E3 is a dual N-channel and P-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology within an SO-8 surface-mount package. The device features a drain-source voltage rating of 30V for the N-channel and 8.0V for the P-channel. Continuous drain current capabilities are specified at 7.8A for the N-channel and 5.0A for the P-channel, measured at 10V and 4.5V gate-source voltages respectively. On-resistance values are 18mΩ for the N-channel and 42mΩ for the P-channel under these conditions.
Feature Summary
- Integrates complementary N-channel and P-channel power switches in a single compact package to reduce board space.
- Employs TrenchFET technology to achieve low on-resistance and efficient power switching performance.
- Designed for surface-mount assembly using the standard SO-8 footprint.
Applications
- DC/DC converter synchronous rectification stages
- Load switch applications requiring complementary control
- Battery protection circuits
Procurement Notes
Verify the specific suffix against official documentation, as the provided reference data lists SI4505DY-T1-GE3. Confirm RoHS compliance status and lead times directly with the manufacturer or authorized distributors before ordering. Ensure the component matches the required electrical specifications for the target design.
Selection Notes
Select this component when a matched pair of N-channel and P-channel MOSFETs is required in a small form factor. Evaluate the on-resistance and current ratings against the specific load requirements. Consider the thermal dissipation capabilities inherent to the SO-8 package for the intended operating environment.
Part Context
This part belongs to the SI4 series of dual MOSFETs from Vishay Siliconix. These devices are engineered to provide high-density power switching solutions. The dual configuration simplifies circuit design by integrating both high-side and low-side switching elements into one unit.
Replacement Considerations
SI4505DY-GE3 is listed as an alias part number. Verify pinout compatibility and electrical parameters before substituting any other dual MOSFET packages.
