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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V/8V 6A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V, 8V
- Current - Continuous Drain (Id) @ 25°C：6A, 3.8A
- Rds On (Max) @ Id, Vgs：18mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4505DY-T1-GE3 is a dual N-channel and P-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology within an SO-8 surface-mount package. The device features a drain-source voltage of 30V for the N-channel and 8.0V for the P-channel. Continuous drain current ratings are 7.8A for the N-channel and 5.0A for the P-channel at case temperature. On-resistance values are specified as 18mΩ @ 10V for the N-channel and 42mΩ @ 4.5V for the P-channel.
Feature Summary
- Dual configuration integrating complementary N-channel and P-channel transistors in a single compact package.
- TrenchFET power MOSFET technology designed to minimize on-resistance and switching losses.
Applications
- Low-side and high-side switching applications requiring complementary channel pairs.
- DC-DC converter synchronous rectification circuits.
- Load switch implementations in portable electronic devices.
Procurement Notes
Verify the specific suffix -T1-GE3 against official Vishay documentation to confirm reel packaging and lead-free compliance. Ensure the ordering part number matches the required dual-channel specification, as generic SI4505DY listings may vary in tape-and-reel quantities or RoHS status without explicit confirmation from the manufacturer's current datasheet.
Selection Notes
Select this component when a matched N-P pair is required in an SO-8 footprint. Confirm that the 30V N-channel and 8V P-channel voltage ratings align with the circuit's maximum operating voltages. Verify thermal management requirements, as the SO-8 package limits power dissipation compared to larger packages like PowerPAK.
Part Context
This part belongs to the Vishay SI4 series of TrenchFET MOSFETs. The SI4505DY variant specifically provides a complementary dual configuration. The -GE3 suffix indicates Green Mold Compound and Halogen-free composition, adhering to modern environmental standards for semiconductor components distributed globally.
Replacement Considerations
Consult Vishay's official cross-reference data for verified substitutes. Generic dual MOSFETs in SO-8 packages may differ in on-resistance or voltage ratings. Do not assume pinout compatibility with other SO-8 dual MOSFETs without verifying the specific datasheet pin configuration.
