SI4534DY-T1-GE3

$1.67

Description：MOSFET N/P-CH 60V 6.2A 8SOIC
Series：TrenchFET®

SKU:2e22204025b8 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V 6.2A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)
Rds On (Max) @ Id, Vgs：29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11nC @ 10V, 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：420pF @ 30V, 650pF @ 30V
Power - Max：2W (Ta), 3.6W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4534DY-T1-GE3

Overview

The Vishay Siliconix SI4534DY-T1-GE3 is a dual N- and P-channel MOSFET utilizing TrenchFET® Gen IV technology. It features a SO-8 surface-mount package with a drain-source voltage of ±60 V. The N-channel exhibits an on-resistance of 29 mΩ at 10 V gate drive, while the P-channel shows 120 mΩ under identical conditions. Continuous drain currents reach 8 A for the N-channel and -4.1 A for the P-channel at a case temperature of 25 °C. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

TrenchFET® Gen IV power MOSFET architecture
100% Rg and UIS tested for reliability

Applications

CCFL Inverter
Fan control
Load switch

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status through authorized distributors. Ensure ordering suffixes match exact package and lead-free requirements. Validate supply chain sources to prevent counterfeit components.

Selection Notes

Evaluate thermal resistance ratings based on specific PCB copper area and airflow conditions. Compare gate charge values against driver capabilities to optimize switching speed. Verify that continuous current limits align with maximum expected load currents under worst-case thermal scenarios.

Part Context

This component belongs to the Vishay Siliconix SI45 series of dual MOSFETs. It integrates complementary N- and P-channel devices into a single compact SO-8 package. This configuration simplifies circuit design for applications requiring paired switching elements.