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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 6.6A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：6.6A, 5.6A
- Rds On (Max) @ Id, Vgs：39mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：625pF @ 20V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4565ADY-T1-E3 is a Vishay Siliconix TrenchFET MOSFET array featuring an N-channel and a P-channel device within a single SOIC-8 package. It supports a drain-source voltage of 40 V for both channels. The N-channel provides a continuous drain current of 6.6 A, while the P-channel delivers 5.6 A. This dual configuration allows for efficient power switching in compact surface-mount designs.
Feature Summary
- Integrates complementary N- and P-channel MOSFETs into a single SOIC-8 package to reduce board space.
- Utilizes TrenchFET technology to achieve low on-resistance for improved power efficiency.
Applications
- DC/DC converter circuits requiring synchronous rectification
- Power management modules for portable electronic devices
- Battery protection and load switch applications
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices, as lifecycle status may change. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity damage prior to soldering.
Selection Notes
Select this component when a matched N/P pair is required for high-current switching at 40 V. The SOIC-8 package offers thermal performance suitable for moderate power dissipation. Evaluate total on-resistance requirements against the specific 6.6 A and 5.6 A current ratings to ensure adequate headroom for the target application.
Part Context
This part belongs to the Vishay TrenchFET series, known for optimized gate charge and low Rds(on). The SI4565ADY variant specifically pairs these characteristics in a dual-transistor format, distinguishing it from single-channel counterparts like the SI4558DY by providing integrated complementary switching capabilities.
Replacement Considerations
SI4565DY-T1-E3 serves as a potential substitute if the 'A' suffix denotes a specific lot or revision difference rather than a functional variation. Verify pinout compatibility and electrical parameters before substitution.
