SI4618DY-T1-E3

$0.82

Description：MOSFET 2N-CH 30V 8A/15.2A 8SOIC
Series：TrenchFET®

SKU:f0f240e5cf78 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 8A/15.2A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8A, 15.2A
Rds On (Max) @ Id, Vgs：17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1535pF @ 15V
Power - Max：1.98W, 4.16W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4618DY-T1-E3

Overview

The SI4618DY-T1-E3 is a dual N-channel MOSFET with an integrated Schottky diode in an SO-8 package. Channel-1 features a drain-source voltage of 30 V, continuous drain current of 8.0 A at TC = 25 °C, and on-resistance of 0.017 Ω at VGS = 10 V. Channel-2 provides 15.2 A continuous drain current and 0.010 Ω on-resistance under the same conditions. The integrated Schottky diode supports 3.8 A forward current with a forward voltage of 0.43 V at 1.0 A. Operating junction temperature ranges from -55 °C to 150 °C.

Feature Summary

TrenchFET power MOSFET technology
Halogen-free construction per IEC 61249-2-21
100% gate resistance and unclamped inductive switching tested

Applications

Notebook logic dc-to-dc conversion
Low current dc-to-dc conversion

Procurement Notes

Verify component authenticity through authorized Vishay distributors or direct manufacturer channels. Confirm RoHS compliance status and lead-free specifications against the latest datasheet revision. Validate ordering suffixes for halogen-free variants if required by specific manufacturing standards. Ensure storage and handling procedures meet moisture sensitivity level requirements prior to assembly.

Selection Notes

Evaluate thermal management requirements based on junction-to-foot and junction-to-ambient resistance values. Compare on-resistance specifications across different gate drive voltages to ensure compatibility with control logic. Assess total gate charge parameters for switching frequency limitations within the target application circuit design constraints.

Part Context

This component belongs to the Si4618 series manufactured by Vishay Siliconix. It utilizes TrenchFET technology for optimized power performance. The device integrates two independent N-channel MOSFETs alongside a common Schottky diode structure within a single surface-mount package.