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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：18mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1550pF @ 15V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4650DY-T1-E3 is a TrenchFET power MOSFET manufactured by Vishay Siliconix, designed for high-efficiency switching applications. It features an N-channel configuration housed in an SO-8 surface-mount package. The device utilizes silicon technology to deliver robust performance with low on-resistance characteristics typical of the TrenchFET architecture. Official documentation identifies this component as part of the SI4 series, emphasizing its suitability for compact power management designs requiring reliable thermal and electrical stability.
Feature Summary
- Utilizes TrenchFET technology for optimized on-resistance and switching efficiency
- N-channel configuration suitable for low-side switching applications
- SO-8 surface-mount package design for compact PCB integration
Applications
- DC-DC converter output stages
- Load switch circuits in portable electronics
- Power management modules in industrial control systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official datasheets. Check for end-of-life notifications or product change notices that may affect long-term availability. Ensure storage conditions meet moisture sensitivity level requirements before assembly.
Selection Notes
Evaluate thermal dissipation capabilities against system heat load requirements. Compare on-resistance values at specific gate-source voltages with alternative components. Consider package thermal resistance for effective heat sinking strategies. Verify voltage ratings exceed maximum circuit operating conditions to ensure reliability under transient loads.
Part Context
This component belongs to the Vishay Siliconix SI4 series of power MOSFETs, which are widely recognized for their balance of performance and cost-effectiveness. The TrenchFET technology represents a significant advancement in planar MOSFET design, offering lower conduction losses compared to traditional structures. This specific model integrates these benefits into a standard SO-8 footprint, facilitating easy adoption in existing designs.
Replacement Considerations
Consult official replacement guides for cross-reference options. Verify pin compatibility and electrical parameters match original specifications. Review manufacturer recommendations for equivalent parts within the same family. Ensure any substitute maintains identical package dimensions and thermal characteristics.
