ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：22mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：865pF @ 15V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
Download product information
Overview
The SI4804CDY-T1-E3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 30 V drain-source voltage (Vds) and an 8 A continuous drain current (Id). The device exhibits a maximum on-resistance (Rds(on)) of 22 mΩ at a gate-source voltage (Vgs) of 10 V. It operates within a temperature range of -55 °C to +150 °C junction temperature, with a power dissipation rating of 3.1 W. Key electrical parameters include a gate threshold voltage of 1.2 V, a gate charge of 23 nC, and a maximum gate-source voltage of ±20 V. The component is housed in an SOIC-8 surface-mount package.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- TrenchFET technology for optimized performance characteristics
- Enhancement mode operation for standard switching applications
Applications
- Power management circuits requiring low-side switching
- Battery protection systems
- DC-DC converter output stages
Procurement Notes
Verify the specific suffix against official Vishay documentation to confirm RoHS compliance and tape-and-reel specifications. Ensure the ordering part number matches the exact package variant required for the PCB footprint. Cross-reference datasheet revisions to confirm pinout consistency before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel solution is required with a 30 V breakdown voltage. The 22 mΩ Rds(on) specification supports high-current applications up to 8 A. Verify that the SOIC-8 thermal dissipation capabilities meet the system's power requirements under expected operating conditions.
Part Context
This component belongs to the SI4 series of dual MOSFETs manufactured by Vishay Siliconix. It shares the SOIC-8 package form factor with other devices in the family but differs in electrical ratings. The TrenchFET generation indicates the specific process technology used for the silicon structure.
Replacement Considerations
SI4804BDY-T1-E3 is listed as a recommended alternative in distributor records. Verify electrical parameter compatibility and package integrity before substitution.
