SI4808DY-T1-E3

Description：MOSFET 2N-CH 30V 5.7A 8SOIC
Series：LITTLE FOOT®

SKU:1475b25b376b Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 5.7A 8SOIC
Series：LITTLE FOOT®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5.7A
Rds On (Max) @ Id, Vgs：22mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id：800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4808DY-T1-E3

Overview

The Vishay Siliconix Si4808DY-T1-E3 is a dual N-channel MOSFET with an integrated Schottky diode in an SO-8 package. The MOSFETs support a drain-source voltage of 30 V, with on-state resistances of 0.022 Ω at 10 V gate drive and 0.030 Ω at 4.5 V. Continuous drain current reaches 7.5 A at 25 °C. The integrated Schottky diode features a 30 V reverse voltage rating and a forward voltage drop of 0.50 V at 1.0 A. Thermal resistance from junction to ambient is 93 °C/W under steady-state conditions.

Feature Summary

Dual N-channel MOSFET configuration with integrated Schottky diode
Low on-state resistance for efficient power switching
Halogen-free construction compliant with IEC 61249-2-21
RoHS directive 2002/95/EC compliant

Applications

DC-DC converter circuits
Power management modules
Synchronous rectification applications

Procurement Notes

Verify the component against the official Vishay datasheet Document Number 71157 to confirm electrical parameters and physical dimensions. Ensure that the SO-8 package matches the required PCB footprint and thermal dissipation capabilities for the specific application environment.

Selection Notes

Select this component when a compact dual-switch solution with synchronous rectification is required. Evaluate the 30 V voltage rating and 7.5 A continuous current capacity against circuit demands. Consider the low RDS(on) values for minimizing conduction losses in high-efficiency designs.

Part Context

This device belongs to the Vishay Siliconix discrete semiconductor portfolio, specifically designed for surface-mount power applications. It integrates two N-channel MOSFETs and one Schottky diode into a single SO-8 package to save board space and simplify assembly.