SI4814BDY-T1-E3

SI4814BDY-T1-E3

  • Description:MOSFET 2N-CH 30V 10A/10.5A 8SOIC
  • Series:LITTLE FOOT®

SKU:826d6cf4e8bb Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 10A/10.5A 8SOIC
  • Series:LITTLE FOOT®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:10A, 10.5A
  • Rds On (Max) @ Id, Vgs:18mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:3.3W, 3.5W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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SI4814BDY-T1-E3

Overview

The Vishay Siliconix Si4814BDY-T1-E3 is a dual N-channel MOSFET with an integrated Schottky diode in an SO-8 package. It features a 30 V drain-source voltage rating and low on-state resistance of 0.018 Ω at VGS = 10 V. Continuous drain current reaches 10 A for Channel 1 and 10.5 A for Channel 2 at TC = 25 °C. The device includes a Schottky diode with a forward voltage of 0.50 V at 1.0 A. Operating junction temperature ranges from -55 °C to +150 °C, supporting high-power density applications.

Feature Summary

  • Integrates two independent N-channel MOSFETs with a common source connection and a dedicated Schottky diode within a single LITTLE FOOT Plus package.
  • Provides low on-state resistance and fast switching characteristics suitable for synchronous rectification and DC/DC converter topologies.
  • Features a built-in Schottky diode to minimize reverse recovery losses and improve overall circuit efficiency.

Applications

  • DC/DC converters
  • Notebook power management circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. The T1 suffix indicates tape and reel packaging, while E3 denotes lead-free composition. Confirm that the component meets all relevant environmental standards required for the intended manufacturing process before finalizing procurement orders.

Selection Notes

Select this component when a compact solution combining dual N-channel MOSFETs and a Schottky diode is required. Ensure the thermal design accommodates the specified power dissipation limits. Verify that the gate drive voltage aligns with the RDS(on) specifications for optimal performance in the target application environment.

Part Context

This part belongs to the Vishay Siliconix LITTLE FOOT Plus family, designed for high-density surface-mount applications. The Si4814BDY integrates discrete components into a single package to reduce board space and parasitic inductance. It is manufactured using advanced silicon technology to achieve low on-resistance and fast switching speeds.

Replacement Considerations

Si4814BDY-T1-GE3

SI4814BDY-T1-E3SI4814BDY-T1-E3

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