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The Vishay Siliconix Si4814BDY-T1-E3 is a dual N-channel MOSFET with an integrated Schottky diode in an SO-8 package. It features a 30 V drain-source voltage rating and low on-state resistance of 0.018 Ω at VGS = 10 V. Continuous drain current reaches 10 A for Channel 1 and 10.5 A for Channel 2 at TC = 25 °C. The device includes a Schottky diode with a forward voltage of 0.50 V at 1.0 A. Operating junction temperature ranges from -55 °C to +150 °C, supporting high-power density applications.
Verify the specific ordering suffix against official documentation to confirm compliance requirements. The T1 suffix indicates tape and reel packaging, while E3 denotes lead-free composition. Confirm that the component meets all relevant environmental standards required for the intended manufacturing process before finalizing procurement orders.
Select this component when a compact solution combining dual N-channel MOSFETs and a Schottky diode is required. Ensure the thermal design accommodates the specified power dissipation limits. Verify that the gate drive voltage aligns with the RDS(on) specifications for optimal performance in the target application environment.
This part belongs to the Vishay Siliconix LITTLE FOOT Plus family, designed for high-density surface-mount applications. The Si4814BDY integrates discrete components into a single package to reduce board space and parasitic inductance. It is manufactured using advanced silicon technology to achieve low on-resistance and fast switching speeds.
Si4814BDY-T1-GE3