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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
- Series：LITTLE FOOT®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.8A, 8.2A
- Rds On (Max) @ Id, Vgs：18.5mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1W, 1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4816BDY-T1-E3 is a dual N-channel 30-V (D-S) MOSFET with an integrated Schottky diode, utilizing TrenchFET technology. It features a SO-8 surface-mount package. Channel-1 has a maximum RDS(on) of 0.0185 Ω at VGS = 10 V and ID = 6.8 A, with a continuous drain current of 6.8 A. Channel-2 has a maximum RDS(on) of 0.0115 Ω at VGS = 10 V and ID = 11.4 A, with a continuous drain current of 11.4 A. The device supports a gate-source voltage of ±20 V and operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Dual N-channel MOSFET configuration with an integrated Schottky diode in a single LITTLE FOOT Plus SO-8 package
- TrenchFET power MOSFET technology for optimized on-resistance and switching performance
- Halogen-free construction compliant with IEC 61249-2-21 standards
Applications
- DC-DC converter synchronous rectification
- Power management circuits requiring low on-resistance
- Battery protection and load switch applications
Procurement Notes
Verify the specific ordering suffix when sourcing components. The SI4816BDY-T1-E3 designation indicates lead-free manufacturing. Ensure compatibility with halogen-free requirements if specified by design constraints. Confirm that the T1 suffix corresponds to the correct tape-and-reel packaging format required for automated assembly processes.
Selection Notes
Select this component for designs requiring a compact dual N-channel solution with an integrated body diode alternative. Evaluate thermal resistance ratings against the expected power dissipation in the target application. Consider the gate charge specifications for driving circuit compatibility and switching frequency requirements.
Part Context
This part belongs to the Vishay Siliconix Si4816BDY series, which integrates dual N-channel MOSFETs with a Schottky diode. The series utilizes TrenchFET technology to achieve low on-resistance in a small SO-8 footprint. The product line is designed for high-efficiency power conversion applications where space savings and thermal performance are critical.
Replacement Considerations
The datasheet identifies the SI4816BDY-T1-GE3 as a lead-free and halogen-free alternative to the SI4816BDY-T1-E3 variant.
FAQ
What is the maximum continuous drain current for Channel-2?
The maximum continuous drain current for Channel-2 is 11.4 A at a case temperature of 25 °C.
Does the device include a Schottky diode?
Yes, the SI4816BDY integrates a Schottky diode with a forward voltage of 0.50 V at 1.0 A.
What is the operating junction temperature range?
The operating junction and storage temperature range is from -55 °C to +150 °C.
