SI4816BDY-T1-GE3

$2.01

Description：MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Series：LITTLE FOOT®

SKU:fb62f6e082c2 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Series：LITTLE FOOT®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5.8A, 8.2A
Rds On (Max) @ Id, Vgs：18.5mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1W, 1.25W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

Download product information

SI4816BDY-T1-GE3

Overview

The Vishay Siliconix SI4816BDY-T1-GE3 is a dual N-channel MOSFET with an integrated Schottky diode, utilizing TrenchFET technology in an SO-8 package. Channel-1 offers a drain-source voltage (VDS) of 30 V and continuous drain current (ID) of 6.8 A at TA = 25 °C, with RDS(on) of 0.0185 Ω at VGS = 10 V. Channel-2 provides 11.4 A ID and 0.0115 Ω RDS(on). The device features a gate threshold voltage (VGS(th)) of 1.0 V to 3.0 V, total gate charge (Qg) of 7.8 nC for Ch-1 and 11.6 nC for Ch-2, and operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Dual N-channel configuration with integrated Schottky diode
TrenchFET power MOSFET technology for low on-resistance
Halogen-free construction according to IEC 61249-2-21
100% Rg tested for reliability

Applications

High-side or low-side switching applications
Synchronous rectification circuits
DC-DC converter output stages

Procurement Notes

Verify the component marking code against the official datasheet to confirm authenticity. Ensure the ordering suffix matches the required halogen-free specification (-GE3). Confirm the package type is SO-8 and check the manufacturer's latest product change notifications for any updates to the manufacturing location or material composition before finalizing procurement.

Selection Notes

Select this component when a compact dual-switch solution with body diode replacement is required. Compare the specific RDS(on) values at your operating VGS level against system efficiency targets. Verify that the SO-8 thermal resistance ratings meet the heat dissipation requirements of the intended PCB layout and ambient conditions.

Part Context

This part belongs to the Vishay SI4 series of LITTLE FOOT Plus Power MOSFETs. It integrates two independent N-channel MOSFETs and a Schottky diode into a single surface-mount package. The 'T1' indicates tape and reel packaging, while 'GE3' denotes lead-free and halogen-free compliance.