SI4816DY-T1-GE3

Description：MOSFET 2N-CH 30V 5.3A/7.7A 8SOIC
Series：LITTLE FOOT®

SKU:4d3f9ee3f55b Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 5.3A/7.7A 8SOIC
Series：LITTLE FOOT®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5.3A, 7.7A
Rds On (Max) @ Id, Vgs：22mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1W, 1.25W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4816DY-T1-GE3

Overview

The SI4816DY-T1-GE3 is a P-channel power MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in an SOIC-8 surface-mount package designed for efficient thermal performance. The device features a drain-source voltage rating of 30V and a gate-source voltage limit of 20V. Key electrical characteristics include a maximum continuous drain current of 17A and a low on-resistance of 5.5 milliohms at a gate drive of 10V. The component supports an operating temperature range from -55°C to +150°C junction temperature.

Feature Summary

TrenchFET P-channel technology provides low on-resistance and fast switching speeds.
SOIC-8 package offers high thermal efficiency and compact footprint.
Enhanced gate charge optimization reduces switching losses.

Applications

DC-DC converter synchronous rectification
Load switch applications
Power management circuits

Procurement Notes

Verify the specific suffix 'T1' indicates reel packaging when sourcing. Confirm RoHS compliance status via the manufacturer datasheet as regulatory requirements evolve. Check for obsolescence notices or end-of-life notifications directly from Vishay Semiconductors before finalizing design-in decisions.

Selection Notes

Select this component for designs requiring a 30V P-channel MOSFET with moderate current handling capabilities. Ensure the gate drive voltage aligns with the specified 10V test condition for optimal Rds(on) performance. Verify that the SOIC-8 thermal dissipation meets the system's power loss requirements under maximum load conditions.

Part Context

This part belongs to the SI4 series of power MOSFETs from Vishay Siliconix. It serves as a replacement for older discrete solutions in low-voltage power applications. The device integrates advanced trench gate technology to improve efficiency compared to standard planar MOSFETs in similar voltage classes.

Replacement Considerations

SI4916DY-T1-GE3 is listed as a recommended alternative in distributor catalogs. Verify pin compatibility and electrical parameter margins before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.