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The Vishay Siliconix SI4830ADY-T1-GE3 is a dual N-channel 30-V (D-S) MOSFET with an integrated Schottky diode. It utilizes TrenchFET technology and LITTLE FOOT Plus packaging in an SO-8 surface-mount configuration. The device features a maximum drain-source voltage of 30 V, a continuous drain current of 7.5 A at 25 °C, and a typical on-state resistance of 0.022 Ω at VGS = 10 V. The integrated Schottky diode provides a forward voltage drop of 0.50 V at 1 A. Operating junction temperatures range from -55 °C to +150 °C.
Verify the component against the official Vishay datasheet document number 72021 to confirm authenticity. Ensure the ordering suffix matches the lead-free and halogen-free specification required for your assembly process. Cross-reference the manufacturer part number with authorized distributors to validate supply chain integrity before finalizing procurement orders.
Select this component when a compact dual-switch solution with synchronous rectification capabilities is required. The low on-resistance supports high-efficiency power conversion in space-constrained designs. Verify that the 30-V rating aligns with the system's maximum operating voltage and that the SO-8 package fits the available PCB footprint constraints.
This component belongs to the Vishay Siliconix Si4830DY series, which offers pin-compatible alternatives within the same family. The 'T1' suffix indicates tape-and-reel packaging, while 'GE3' denotes lead-free and halogen-free compliance. It serves as a specialized power switching element designed for modern DC/DC converter topologies requiring integrated body diode functionality.
The Si4830DY is listed as a pin-compatible alternative within the same product family.