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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8A 8SOIC
- Series：LITTLE FOOT®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：950pF @ 15V
- Power - Max：2.9W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4830CDY-T1-GE3 is a dual N-channel 30-V (D-S) MOSFET with an integrated Schottky diode, housed in an SO-8 package. It features a maximum continuous drain current of 8.0 A at TC = 25 °C and a typical on-state resistance of 0.020 Ω at VGS = 10 V. The device includes two independent channels with identical electrical characteristics, including a gate threshold voltage ranging from 1 V to 3 V. The integrated Schottky diode supports a forward current of 2.0 A with a forward voltage of 0.51 V at 1.0 A. Total gate charge is typically 16.5 nC at VGS = 10 V.
Feature Summary
- Dual N-channel MOSFETs combined with a single Schottky diode in one LITTLE FOOT Plus package
- Optimized for PWM applications with low gate charge and fast switching characteristics
- Compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free definition
Applications
- Notebook logic dc-to-dc converters
- Low current dc-to-dc power supplies
Procurement Notes
Verify the component against official Vishay datasheet specifications before integration. Confirm that the ordering suffix -T1-GE3 matches the required tape-and-reel packaging format and lead-free/halogen-free status. Ensure compatibility with standard SO-8 footprint dimensions during PCB layout design.
Selection Notes
Select this component when a compact solution requires two isolated N-channel switches and a freewheeling diode within a single surface-mount package. Evaluate thermal derating curves based on expected ambient temperatures and verify that the 30-V drain-source voltage rating exceeds the maximum circuit operating voltage.
Part Context
This part belongs to the Si48 series of Vishay Siliconix dual MOSFETs designed for space-constrained power management applications. The T1 suffix indicates reel packaging, while GE3 denotes lead-free and halogen-free compliance according to manufacturer standards.
Replacement Considerations
Consult the official Vishay documentation for verified substitute part numbers. Cross-reference pinout configurations and absolute maximum ratings to ensure functional equivalence without redesigning the host circuit board.
