SI4906DY-T1-E3

Overview

The Vishay Siliconix SI4906DY-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage rating of 40 V and a continuous drain current of 6.6 A at a case temperature of 25 °C. The on-state resistance (RDS(on)) is specified at 0.039 Ω with a gate-source voltage of 10 V, and 0.050 Ω at 4.5 V. Total gate charge is typically 14.4 nC under standard test conditions. The device supports a maximum junction temperature of 150 °C and includes a body diode with a reverse recovery time of up to 45 ns.

Feature Summary

• TrenchFET power MOSFET architecture for optimized performance
• 100% gate charge and unclamped inductive switching tested
• Halogen-free construction compliant with IEC 61249-2-21 definition

Applications

• CCFL Inverter circuits

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The -E3 suffix indicates lead-free composition, while -GE3 denotes both lead-free and halogen-free compliance. Confirm that the component meets RoHS Directive 2002/95/EC requirements for your intended manufacturing process. Ensure the selected variant matches the exact environmental specifications required by the design.

Selection Notes

Select this component based on its 40 V drain-source voltage capability and low on-state resistance characteristics suitable for efficient switching applications. Consider the thermal resistance ratings when designing heat dissipation strategies, particularly for steady-state operations. Evaluate the gate charge parameters to ensure compatibility with the driving circuitry's switching frequency requirements.

Part Context

This part belongs to the Vishay Siliconix SI4 series of dual N-channel MOSFETs. It is manufactured using silicon technology and is designed for surface mounting. The product line emphasizes high reliability through rigorous testing protocols, including 100% gate charge and UIS verification, ensuring consistent performance across qualified manufacturing locations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.