SI4923DY-T1-E3

Overview

The SI4923DY-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in an SOIC-8 surface-mount package. The device supports a drain-source voltage of -20V and a continuous drain current of -8A at 25°C. Key electrical parameters include a maximum on-resistance of 7.5 milliohms at a gate-source voltage of -10V, with a gate threshold voltage ranging from -0.6 to -1.5 volts. The component operates within a temperature range of -55°C to 150°C junction temperature and features a power dissipation rating of 3.5W at ambient temperature.

Feature Summary

• TrenchFET technology for optimized on-resistance and switching performance
• P-channel configuration suitable for high-side load switching applications
• Surface-mount SOIC-8 package design for compact circuit board integration

Applications

• High-side load switching circuits
• Power management modules requiring low on-resistance
• Battery protection and control systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and compliance status. Confirm RoHS3 compliance details directly with Vishay Siliconix or authorized distributors prior to procurement. Ensure that the EOL or lifecycle status is validated through official channels before finalizing supply chain agreements.

Selection Notes

Select this component when a P-channel MOSFET with low on-resistance and moderate current handling capability is required. The SOIC-8 package offers a balance between thermal performance and space efficiency. Verify that the -20V voltage rating and -8A current capacity align with the specific circuit requirements and operating conditions.

Part Context

This part belongs to the SI49 series of P-channel MOSFETs from Vishay Siliconix. The series is characterized by the use of TrenchFET technology to achieve low RDS(on) values. These devices are designed for general-purpose switching applications where efficient power management and compact packaging are critical factors in system design.

Replacement Considerations

Consult Vishay Siliconix official documentation for verified direct replacements. Cross-reference pinouts, electrical ratings, and package dimensions to ensure compatibility. Generic substitutes may not match the specific TrenchFET characteristics or thermal performance of the original component.