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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：29mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1350pF @ 15V
- Power - Max：5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4925DDY-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a -30 V drain-source voltage rating and supports a continuous drain current of -8 A at a case temperature of 25 °C. The device exhibits a maximum on-state resistance of 0.029 Ω at VGS = -10 V and -7.3 A. Total gate charge reaches 50 nC at VGS = -10 V. Thermal performance includes a junction-to-case resistance of 25 °C/W and a junction-to-ambient resistance of 50 °C/W. Operating temperatures range from -55 °C to +150 °C.
Feature Summary
- Dual P-channel configuration with independent channel control within a single package
- TrenchFET power MOSFET architecture for optimized conduction characteristics
- Validated against 100% Unclamped Inductive Switching (UIS) stress conditions
Applications
- Load switches for notebook computers
- Load switching circuits in desktop personal computers
- Power management stages in game stations
Procurement Notes
Verify the specific ordering suffix to confirm packaging format, as standard variants may differ between tape-and-reel, cut tape, or tube configurations. Confirm RoHS compliance status through official manufacturer documentation prior to finalizing component selection for production runs.
Selection Notes
Evaluate thermal derating curves when designing for ambient temperatures exceeding 25 °C, as continuous drain current decreases significantly above this threshold. Ensure gate drive voltages remain within the ±20 V absolute maximum rating to prevent dielectric breakdown while maintaining sufficient overdrive for low RDS(on).
Part Context
This component belongs to the Vishay SI4 series of TrenchFET power MOSFETs. It serves as a lead-free and halogen-free alternative to older non-compliant versions within the same electrical family. The part integrates two isolated P-channel devices into one compact footprint to reduce board space requirements.
Replacement Considerations
SI4925DY-E3
FAQ
Is the SI4925DDY-T1-GE3 rated for unclamped inductive switching?
Yes, the datasheet confirms that the device has been tested for 100% UIS capability.
What is the maximum junction-to-ambient thermal resistance?
The maximum junction-to-ambient thermal resistance is 50 °C/W under steady-state conditions.
How does the on-resistance vary with gate-source voltage?
RDS(on) is specified as 0.029 Ω max at VGS = -10 V and increases to 0.041 Ω max at VGS = -4.5 V.
