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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.9A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.9A
- Rds On (Max) @ Id, Vgs：35mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：530pF @ 15V
- Power - Max：2.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4936BDY-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 6.9 A at TC = 25 °C. The on-state resistance (RDS(on)) is typically 0.035 Ω at VGS = 10 V and 0.051 Ω at VGS = 4.5 V. Total gate charge (Qg) is 9.1 nC at VGS = 10 V. Maximum power dissipation is 2.8 W at TC = 25 °C. Operating junction temperature ranges from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration with independent channel control
- TrenchFET Power MOSFET technology for low on-resistance
- Halogen-free construction compliant with IEC 61249-2-21
Applications
- Low Current DC/DC Conversion
- Notebook System Power
Procurement Notes
Verify the specific ordering suffix when sourcing replacements. The -E3 suffix indicates lead-free status, while -GE3 denotes both lead-free and halogen-free compliance. Confirm RoHS Directive 2002/95/EC alignment if environmental specifications are critical for the target assembly process.
Selection Notes
Evaluate thermal management requirements based on the maximum junction-to-ambient thermal resistance of 62.5 °C/W under steady-state conditions. Ensure gate drive voltages align with the specified RDS(on) thresholds at 10 V or 4.5 V to optimize switching efficiency and conduction losses within the SO-8 package constraints.
Part Context
This component belongs to the Vishay Siliconix Si4936 series of dual N-channel MOSFETs. It is designed for compact power applications requiring high current density in small footprints. The device integrates two independent channels within a single SO-8 package to facilitate space-constrained circuit designs.
Replacement Considerations
Si4936ADY-T1-E3
FAQ
What is the typical total gate charge (Qg) at VGS = 10 V?
The typical total gate charge is 9.1 nC.
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150 °C.
Is this component compliant with RoHS directives?
Yes, the device is compliant with RoHS Directive 2002/95/EC.
