SI4936DY

$0.82

Description：MOSFET 2N-CH 30V 5.8A 8SOIC
Series：-

SKU:4c9d07ab1b3f Category: FET, MOSFET Arrays Brand: Fairchild Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 5.8A 8SOIC
Series：-
Mfr：Fairchild Semiconductor
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5.8A (Ta)
Rds On (Max) @ Id, Vgs：37mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：460pF @ 15V
Power - Max：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4936DY

Overview

The SI4936DY is a dual N-channel enhancement mode MOSFET manufactured by Fairchild Semiconductor. It features a 30V drain-source breakdown voltage and supports a continuous drain current of 5.8A. The device utilizes TrenchFET technology to achieve a low on-state resistance of 0.037 ohms at a gate-source voltage of 10V, and 0.055 ohms at 4.5V. Packaged in an SO-8 surface-mount format, it includes built-in diodes for each element. The component operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

Dual N-channel configuration with integrated body diodes
Low on-state resistance optimized for minimal power loss
Fast switching speed with reduced gate charge
High power and current handling capability

Applications

Battery switch circuits
Load switch applications
Motor control systems

Procurement Notes

Verify the specific manufacturer origin as the part number appears associated with both Vishay Siliconix and Fairchild Semiconductor in public records. Confirm RoHS compliance status and exact package dimensions against the official datasheet before integration. Ensure the source document matches the intended electrical specifications for the target design.

Selection Notes

Select this component for low-voltage applications requiring efficient switching and high current density. The dual channel design simplifies circuit layout compared to discrete single FETs. Consider the thermal dissipation requirements given the 2W power rating in the specified package. Verify gate drive voltage compatibility with the threshold characteristics for optimal performance.

Part Context

This device belongs to the SI4936 series of dual N-channel MOSFETs. It is designed for battery-powered and low-voltage systems where efficiency is critical. The TrenchFET process technology distinguishes it from standard planar devices by offering superior on-resistance per unit area.