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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.9A 8SOIC
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.9A
- Rds On (Max) @ Id, Vgs：32mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4963BDY-T1-E3 is a dual P-channel MOSFET utilizing TrenchFET technology in an SO-8 surface-mount package. It features a drain-source voltage (VDS) of -20 V and a continuous drain current (ID) of -6.5 A at 25 °C. The device exhibits a maximum on-state resistance (RDS(on)) of 0.032 Ω at VGS = -4.5 V and -6.5 A, or 0.050 Ω at VGS = -2.5 V and -2 A. Total gate charge (Qg) is typically 14 nC. Thermal performance includes a junction-to-ambient resistance (RthJA) of 91 °C/W steady state and a junction-to-foot resistance (RthJF) of 34 °C/W.
Feature Summary
- Dual P-channel configuration with independent channel control within a single compact package.
- TrenchFET power MOSFET technology designed for low on-resistance and efficient switching.
- Lead-free and halogen-free construction compliant with IEC 61249-2-21 definitions.
Applications
- Low-side and high-side load switching applications
- Power management circuits requiring dual isolated channels
- Battery protection and power distribution modules
Procurement Notes
Verify the specific ordering suffix to confirm environmental compliance. The -E3 suffix indicates lead-free composition, while the -GE3 suffix denotes both lead-free and halogen-free status according to IEC 61249-2-21. Confirm package dimensions against SO-8 narrow specifications before integration into PCB layouts.
Selection Notes
Select this component when a dual P-channel topology is required within a limited footprint. Ensure the gate drive voltage meets the minimum threshold for the desired RDS(on), as resistance increases significantly below -4.5 V. Evaluate thermal dissipation requirements against the 91 °C/W junction-to-ambient rating for steady-state operation.
Part Context
This part belongs to the Vishay SI4 series of TrenchFET power MOSFETs. It shares the SO-8 narrow package form factor with other devices in the family but differs in channel count and polarity. The dual configuration distinguishes it from single-channel counterparts like the SI4963DY.
Replacement Considerations
The Si4963BDY-T1-GE3 serves as a verified alternative offering identical electrical characteristics with added halogen-free certification. Verify pinout compatibility and thermal resistance values when substituting with other dual P-channel SO-8 devices.
