SI4973DY-T1-GE3

SI4973DY-T1-GE3

  • Description:MOSFET 2P-CH 30V 5.8A 8SOIC
  • Series:TrenchFET®

SKU:7111e5872b33 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2P-CH 30V 5.8A 8SOIC
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:5.8A
  • Rds On (Max) @ Id, Vgs:23mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1.1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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SI4973DY-T1-GE3

Overview

The SI4973DY-T1-GE3 is a dual P-channel MOSFET array manufactured by Vishay Siliconix. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 5.8A at 25°C. The device utilizes TrenchFET technology for low on-resistance and is housed in an 8-SOIC surface-mount package. Maximum power dissipation is rated at 1.1W, with an operating junction temperature range from -55°C to 150°C. The component is RoHS compliant and classified as obsolete.

Feature Summary

  • Dual P-channel configuration within a single compact package
  • TrenchFET technology for enhanced switching performance
  • Logic-level gate drive compatibility
  • Halogen-free construction per IEC 61249-2-21

Applications

  • Low-voltage power management circuits
  • Battery protection systems
  • DC-DC converter synchronous rectification
  • Load switch applications

Procurement Notes

This component is officially listed as obsolete and no longer manufactured by Vishay Siliconix. Availability is restricted to existing stock or third-party distributors. Verification of authenticity and lot traceability is critical when sourcing from non-direct channels. Designers should prioritize replacement strategies due to the lack of future production support.

Selection Notes

Engineers selecting this part must account for its obsolete status and limited supply chain longevity. The 30V rating and 5.8A current capacity define its operational envelope. Alternative components with similar pinouts and electrical characteristics should be evaluated to ensure long-term project viability and supply chain stability.

Part Context

The SI4973 series belongs to Vishay's TrenchFET family, designed for efficient power switching in space-constrained applications. The dual P-channel architecture allows for simplified circuit designs in bridge and load-switch configurations. The 8-SOIC package provides thermal performance suitable for moderate power dissipation requirements.

Replacement Considerations

  • SI4973DY-T1-E3
  • SI4925DDY-T1-GE3

FAQ

Is the SI4973DY-T1-GE3 currently in active production?

No, the component is officially classified as obsolete and is no longer manufactured.

What is the maximum drain-source voltage for this device?

The maximum drain-source voltage (Vdss) is 30V.

SI4973DY-T1-GE3SI4973DY-T1-GE3

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