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The SI4973DY-T1-GE3 is a dual P-channel MOSFET array manufactured by Vishay Siliconix. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 5.8A at 25°C. The device utilizes TrenchFET technology for low on-resistance and is housed in an 8-SOIC surface-mount package. Maximum power dissipation is rated at 1.1W, with an operating junction temperature range from -55°C to 150°C. The component is RoHS compliant and classified as obsolete.
This component is officially listed as obsolete and no longer manufactured by Vishay Siliconix. Availability is restricted to existing stock or third-party distributors. Verification of authenticity and lot traceability is critical when sourcing from non-direct channels. Designers should prioritize replacement strategies due to the lack of future production support.
Engineers selecting this part must account for its obsolete status and limited supply chain longevity. The 30V rating and 5.8A current capacity define its operational envelope. Alternative components with similar pinouts and electrical characteristics should be evaluated to ensure long-term project viability and supply chain stability.
The SI4973 series belongs to Vishay's TrenchFET family, designed for efficient power switching in space-constrained applications. The dual P-channel architecture allows for simplified circuit designs in bridge and load-switch configurations. The 8-SOIC package provides thermal performance suitable for moderate power dissipation requirements.
No, the component is officially classified as obsolete and is no longer manufactured.
The maximum drain-source voltage (Vdss) is 30V.