SI5515CDC-T1-GE3

$1.03

Description：MOSFET N/P-CH 20V 4A 1206-8
Series：TrenchFET®

SKU:53a50a80f314 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 4A 1206-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：4A
Rds On (Max) @ Id, Vgs：36mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id：800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：632pF @ 10V
Power - Max：3.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：1206-8 ChipFET™
Grade：-
Qualification：-

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SI5515CDC-T1-GE3

Overview

The Vishay Siliconix SI5515CDC-T1-GE3 is a dual-channel MOSFET array featuring N- and P-Channel devices in a leadless 1206-8 ChipFET package. It utilizes TrenchFET technology with a Drain-Source Voltage (VDS) of 20 V for both channels. The N-Channel exhibits an on-resistance (RDS(on)) of 0.036 Ω at VGS = 4.5 V, while the P-Channel shows 0.100 Ω at VGS = -4.5 V. Continuous drain current ratings are 4 A for the N-Channel and 3.1 A for the P-Channel at TA = 25 °C. Total gate charge is typically 6.5 nC for the N-Channel and 6.2 nC for the P-Channel.

Feature Summary

Dual-channel configuration integrating N- and P-Channel MOSFETs within a single compact footprint.
Leadless 1206-8 ChipFET package design optimized for surface mount applications to maximize board space efficiency.
TrenchFET power MOSFET architecture providing low on-state resistance and high switching performance.

Applications

Load switching for portable electronic devices
Power management circuits requiring complementary channel control

Procurement Notes

Verify component authenticity by checking the marking code EH against official Vishay documentation. Confirm the presence of the GE3 suffix to ensure compliance with RoHS directives and halogen-free requirements as specified in the datasheet. Cross-reference lot traceability codes during incoming inspection.

Selection Notes

Select this component when a compact dual-channel solution is required for low-voltage applications. Ensure the PCB layout accommodates the specific thermal dissipation needs of the 1206-8 package. Verify that the operating voltage remains within the 20 V limit and that gate drive levels align with the specified RDS(on) test conditions.

Part Context

This part belongs to the Vishay Siliconix TrenchFET family, designed for high-efficiency power switching. The 1206-8 ChipFET package provides thermal performance comparable to larger SO-8 packages while occupying significantly less board area. It serves as a direct integration point for systems needing paired N- and P-channel logic-level switching capabilities.