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Product Detailed Parameters
- Description：MOSFET 2P-CH 8V 4A 1206-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：8V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：80mOhm @ 3.3A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：350pF @ 4V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：1206-8 ChipFET™
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix Si5905BDC-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in a leadless 1206-8 ChipFET package. It features an 8 V drain-source voltage rating and a maximum continuous drain current of -4 A at 25 °C case temperature. The on-state resistance (RDS(on)) is specified at 0.080 Ω with a gate-source voltage of -4.5 V. Key dynamic parameters include a typical total gate charge of 1 nC and input capacitance of 350 pF. The device supports an operating junction temperature range from -55 °C to 150 °C.
Feature Summary
- Dual P-channel configuration within a single compact leadless package
- TrenchFET power MOSFET architecture for optimized performance
- Halogen-free construction compliant with IEC 61249-2-21 standards
Applications
- Load switching for portable electronic devices
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. The GE3 suffix indicates lead-free and halogen-free manufacturing. Confirm availability status through authorized distributors as supply conditions may change. Ensure the component matches the required thermal and electrical specifications for the target application before finalizing procurement.
Selection Notes
Select this component when a low-profile dual P-channel switch is required for space-constrained designs. Evaluate the 1206-8 package dimensions against board layout constraints. Consider the thermal resistance ratings and derating curves if operation exceeds standard ambient temperatures. Verify that the 8 V voltage rating provides sufficient margin for the specific circuit rail voltages.
Part Context
This part belongs to the Vishay Siliconix Si5905BD series of dual MOSFETs. The Si5905BDC-T1-E3 is the lead-free variant without halogen restrictions, while the SI5905BDC-T1-GE3 adds halogen-free compliance. Both share identical electrical characteristics and packaging but differ in environmental certification.
Replacement Considerations
The Si5905BDC-T1-E3 serves as a direct functional replacement, differing only in halogen content. Cross-reference pinout compatibility and thermal resistance values when substituting with other dual MOSFET packages.
