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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6A PPAK CHIPFET
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：31mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：300pF @ 15V
- Power - Max：10.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® ChipFET™ Dual
- Supplier Device Package：PowerPAK® ChipFet Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI5906DU-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and a maximum continuous drain current of 6 A. The device offers low on-state resistance, specified as 0.031 Ω at VGS = 10 V and 0.040 Ω at VGS = 4.5 V. Total gate charge is typically 8 nC at VGS = 10 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a thermally enhanced PowerPAK ChipFET package.
Feature Summary
- Dual N-channel configuration with TrenchFET power MOSFET architecture
- Thermally enhanced PowerPAK ChipFET package with small footprint area
- Low on-resistance for improved efficiency
- Halogen-free construction compliant with IEC 61249-2-21
Applications
- Network applications
- System power DC/DC conversion
Procurement Notes
Verify the component against the official Vishay datasheet document number 65168. Confirm that the marking code matches the expected format CD XXX. Ensure the ordering suffix corresponds to lead-free and halogen-free specifications. Validate the package type as PowerPAK ChipFET Dual before integration into the design.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching. The 30 V rating suits 5 V and 12 V systems. Consider the thermal resistance values for heat dissipation requirements. Verify gate drive compatibility with the specified threshold voltage characteristics.
Part Context
This part belongs to the Vishay Siliconix Si5906DU series. It is manufactured using silicon technology. The product line emphasizes high performance in small surface-mount packages. The specific model includes environmental compliance features such as RoHS directive adherence.
Replacement Considerations
Check for direct substitutes within the Vishay portfolio sharing identical pinouts and electrical parameters. Verify package dimensions and thermal characteristics match the existing board layout. Ensure any replacement maintains the same voltage and current ratings.
FAQ
What is the typical total gate charge (Qg) for the SI5906DU?
The typical total gate charge is 8 nC when tested at VDS = 15 V, VGS = 10 V, and ID = 6.6 A.
What is the maximum junction-to-case thermal resistance?
The maximum junction-to-case thermal resistance is 12 °C/W under steady-state conditions.
Is the device suitable for high-temperature operation?
Yes, the operating junction temperature range extends up to +150 °C.
