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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6A PPAK CHIPFET
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Rds On (Max) @ Id, Vgs：19.2mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：765pF @ 15V
- Power - Max：10.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® ChipFet Dual
- Supplier Device Package：PowerPAK® ChipFet Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI5922DU-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and a maximum continuous drain current of 6 A. The device offers low on-resistance, with a maximum RDS(on) of 0.0192 Ω at VGS = 10 V and ID = 5 A. Total gate charge (Qg) is typically 4.7 nC at VGS = 4.5 V. It is housed in a leadless PowerPAK ChipFET package with dimensions of 3.0 mm x 1.9 mm and a profile thickness of 0.8 mm.
Feature Summary
- TrenchFET power MOSFET architecture
- Thermally enhanced leadless PowerPAK ChipFET package
- 100% Rg and UIS tested
Applications
- DC/DC power supply
Procurement Notes
Verify the component against official Vishay datasheet document number 76056 to confirm technical specifications. Ensure the ordering suffix -T1-GE3 matches the required tape-and-reel packaging format. Confirm RoHS compliance and material categorization details directly from the manufacturer's documentation before finalizing procurement.
Selection Notes
Select this component for applications requiring a compact dual N-channel configuration with low gate charge. Verify that the 30 V breakdown voltage and 6 A current ratings align with circuit requirements. Evaluate thermal performance using the specified junction-to-case resistance values under expected operating conditions.
Part Context
This part belongs to the Vishay Siliconix dual MOSFET family, specifically designed for space-constrained surface-mount applications. The PowerPAK ChipFET package provides a small footprint area while maintaining robust thermal characteristics suitable for modern electronic designs.
Replacement Considerations
Consult official Vishay resources for confirmed substitute part numbers. Do not assume cross-compatibility based solely on package type or general electrical parameters without verifying specific device characteristics.
