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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 2.7A 1206-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.7A
- Rds On (Max) @ Id, Vgs：110mOhm @ 2.7A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：1206-8 ChipFET™
- Grade：-
- Qualification：-
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Overview
The SI5933DC-T1-E3 is a dual P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and an 8 V gate-source voltage limit. The device provides a continuous drain current of 4 A with a maximum on-resistance of 58 mΩ at -4.5 V gate drive. Packaged in a compact DFN1006-8 (1006) surface-mount format, it operates within a temperature range of -55°C to +150°C junction temperature. This component is designed for efficient power switching applications requiring low profile and high reliability.
Feature Summary
- Dual P-channel configuration integrated into a single compact package for space-constrained designs.
- TrenchFET technology ensures low on-resistance and optimized switching performance.
- Enhanced thermal efficiency through a small footprint surface-mount package.
Applications
- Power management circuits in portable electronic devices
- Load switches for battery-powered systems
- Low-side or high-side switching in consumer electronics
Procurement Notes
Verify the specific suffix E3 confirms RoHS compliance before procurement. Confirm the package type matches the design requirements as variations exist within the series. Check current availability status as distribution channels may vary. Ensure the ordering part number aligns exactly with the required tape and reel specifications for automated assembly processes.
Selection Notes
Select this component when a dual P-channel solution is required in a minimal footprint. Verify that the 20 V voltage rating meets the system's maximum operating conditions. Consider the 4 A current capability against peak load requirements. Ensure the gate drive voltage does not exceed the 8 V absolute maximum rating to prevent device damage.
Part Context
This part belongs to the Vishay Siliconix SI59xx series of dual MOSFETs. It shares the DFN1006-8 package form factor with other members of the family. The series is characterized by low on-resistance and fast switching speeds suitable for modern power management needs.
Replacement Considerations
Direct substitutes include SI5933DC-E3. Alternative dual P-channel MOSFETs in similar packages should be evaluated for matching voltage, current, and resistance parameters.
