SI5980DU-T1-GE3

$0.61

Description：MOSFET 2N-CH 100V 2.5A CHIPFET
Series：-

SKU:84effc6e5045 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 2.5A CHIPFET
Series：-
Mfr：Vishay Siliconix
Package：Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：2.5A
Rds On (Max) @ Id, Vgs：567mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：3.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：78pF @ 50V
Power - Max：7.8W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：PowerPAK® ChipFET™ Dual
Supplier Device Package：PowerPAK® ChipFet Dual
Grade：-
Qualification：-

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SI5980DU-T1-GE3

Overview

The SI5980DU-T1-GE3 is a single N-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an 8-pin ChipFET package designed for surface mount applications. The device features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 11.3 A. Its maximum on-resistance is specified at 19.5 mOhms, with a gate-source voltage limit of ±20 V. The component supports a junction temperature range from -55 °C to +150 °C and has a power dissipation capacity of 4.5 W.

Feature Summary

Incorporates TrenchFET technology for optimized performance characteristics.
Designed for surface mount installation using the ChipFET-8 package format.

Applications

DC-DC converter circuits
Power switching applications
Load management systems

Procurement Notes

This specific part number is listed as obsolete or end-of-life within available distribution records. Verification of current availability requires direct consultation with authorized manufacturers or distributors. Alternative sourcing strategies should be considered due to the discontinued status indicated in public supply chain data.

Selection Notes

Designers requiring this component must verify compatibility with the 60 V drain-source voltage and 11.3 A current limits. The ChipFET-8 package dimensions and thermal characteristics must align with the target PCB layout. Since the part is marked obsolete, evaluating equivalent active components with matching electrical specifications is recommended for new designs.

Part Context

The SI5980DU belongs to the Vishay Siliconix family of single N-channel MOSFETs utilizing TrenchFET technology. This series is characterized by low on-resistance and high efficiency. The specific model integrates these features into a compact surface-mount package suitable for various power management applications.