SI6562CDQ-T1-GE3

Overview

The Vishay Siliconix SI6562CDQ-T1-GE3 is a dual N- and P-channel enhancement mode MOSFET in a TSSOP-8 package. It utilizes TrenchFET technology for low on-resistance. The N-channel device has a drain-source voltage of 20 V, continuous drain current of 6.7 A at TC=25°C, and RDS(on) of 0.022 Ω at VGS=4.5V. The P-channel device features a -20 V rating, -6.1 A current, and 0.030 Ω RDS(on). Total gate charges are 15 nC (N-Ch) and 34 nC (P-Ch). Operating temperature ranges from -55°C to +150°C.

Feature Summary

• TrenchFET power MOSFET technology
• Lead-free and halogen-free construction

Applications

• Load switch
• DC/DC converter

Procurement Notes

Verify the component status before procurement as the specific variant SI6562CDQ-T1-BE3 is listed as obsolete. Confirm RoHS compliance details directly with the manufacturer or authorized distributors. Ensure the ordering suffix matches the required lead-free specification. Validate availability through official channels prior to design finalization.

Selection Notes

Select this component for applications requiring a compact dual MOSFET solution in a TSSOP-8 footprint. Verify that the 20 V drain-source voltage rating meets the circuit requirements. Check thermal derating curves if operating above 25°C case temperature. Ensure gate drive voltages align with the specified RDS(on) test conditions.

Part Context

This part belongs to the Si6562CDQ family of LITTLE FOOT TSSOP-8 power MOSFETs. These devices integrate high-density die into standard IC packages to reduce board area while maintaining thermal performance. The series is designed for small form factor applications where space efficiency is critical.

Replacement Considerations

Check for direct pin-compatible alternatives within the Vishay TrenchFET portfolio. Verify that any substitute maintains the same TSSOP-8 outline and electrical ratings. Consult the manufacturer's cross-reference documentation for qualified replacements.

FAQ

What is the maximum junction-to-ambient thermal resistance?

The maximum junction-to-ambient thermal resistance is 110 °C/W for the N-channel and 105 °C/W for the P-channel.

What is the pulsed drain current capability?

The pulsed drain current (IDM) is rated at 30 A for both the N-channel and P-channel devices.

How does the package improve thermal performance?

The TSSOP-8 package uses a custom leadframe to maximize heat transfer from the die to the PCB copper planes connected to the drain pins.