SI6924AEDQ-T1-E3

SI6924AEDQ-T1-E3

$1.29
  • Description:MOSFET 2N-CH 28V 4.1A 8TSSOP
  • Series:-

SKU:ca4706a6b8ea Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 28V 4.1A 8TSSOP
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):28V
  • Current - Continuous Drain (Id) @ 25°C:4.1A
  • Rds On (Max) @ Id, Vgs:33mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

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SI6924AEDQ-T1-E3

Overview

The SI6924AEDQ-T1-E3 is a dual N-channel MOSFET array manufactured by Vishay Siliconix, designed for surface mount applications. It features a TSSOP-8 package and utilizes TrenchFET technology. The device supports a drain-source voltage of 28V and a continuous drain current of 4.1A. Power dissipation is rated at 1W. It is suitable for logic-level gate switching in compact electronic designs.

Feature Summary

  • Dual N-channel configuration with common drain architecture
  • Logic-level gate switching capability
  • TrenchFET technology implementation

Applications

  • Logic-level gate switching
  • Surface mount circuit design
  • Compact electronic module integration

Procurement Notes

Verify the specific manufacturer part number against official Vishay documentation to ensure component authenticity. Confirm that the TSSOP-8 package dimensions match your PCB footprint requirements. Check RoHS compliance status through the manufacturer's official channels before finalizing procurement decisions.

Selection Notes

Select this component when a dual N-channel MOSFET array is required for low-voltage logic applications. Ensure the 28V rating and 4.1A current capacity meet the circuit demands. Consider the TSSOP-8 package size for space-constrained designs requiring surface mount assembly.

Part Context

This component belongs to the Vishay Siliconix MOSFET array series, specifically engineered for high-density surface mount applications. It integrates two N-channel transistors in a single package, offering a compact solution for power management and signal switching tasks in modern electronics.

Replacement Considerations

SI6968BEDQ-T1-GE3 is a publicly confirmed substitute part number for the SI6924AEDQ-T1-E3. Verify electrical compatibility and pinout alignment before substitution.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage rating is 28V.

How many channels does this MOSFET array contain?

It contains two N-channel MOSFETs configured as a dual array.

SI6924AEDQ-T1-E3SI6924AEDQ-T1-E3
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