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The SI6924AEDQ-T1-E3 is a dual N-channel MOSFET array manufactured by Vishay Siliconix, designed for surface mount applications. It features a TSSOP-8 package and utilizes TrenchFET technology. The device supports a drain-source voltage of 28V and a continuous drain current of 4.1A. Power dissipation is rated at 1W. It is suitable for logic-level gate switching in compact electronic designs.
Verify the specific manufacturer part number against official Vishay documentation to ensure component authenticity. Confirm that the TSSOP-8 package dimensions match your PCB footprint requirements. Check RoHS compliance status through the manufacturer's official channels before finalizing procurement decisions.
Select this component when a dual N-channel MOSFET array is required for low-voltage logic applications. Ensure the 28V rating and 4.1A current capacity meet the circuit demands. Consider the TSSOP-8 package size for space-constrained designs requiring surface mount assembly.
This component belongs to the Vishay Siliconix MOSFET array series, specifically engineered for high-density surface mount applications. It integrates two N-channel transistors in a single package, offering a compact solution for power management and signal switching tasks in modern electronics.
SI6968BEDQ-T1-GE3 is a publicly confirmed substitute part number for the SI6924AEDQ-T1-E3. Verify electrical compatibility and pinout alignment before substitution.
The maximum drain-source voltage rating is 28V.
It contains two N-channel MOSFETs configured as a dual array.