SI6954ADQ-T1-GE3

$1.18

Description：MOSFET 2N-CH 30V 3.1A 8TSSOP
Series：TrenchFET®

SKU:e0067915f61b Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 3.1A 8TSSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：3.1A
Rds On (Max) @ Id, Vgs：53mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：830mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

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SI6954ADQ-T1-GE3

Overview

The Vishay Siliconix SI6954ADQ-T1-GE3 is a dual N-channel Power MOSFET utilizing TrenchFET technology, housed in a surface-mount TSSOP-8 package. It features a drain-source voltage rating of 30 V and a continuous drain current of 3.4 A at 25 °C. The device exhibits a maximum on-state resistance of 0.053 Ω at VGS = 10 V and 0.075 Ω at VGS = 4.5 V. Operating within a junction temperature range of -55 °C to +150 °C, it offers a typical gate charge of 8.1 nC and a forward transconductance of 10 S.

Feature Summary

Dual N-channel configuration with independent channel control
TrenchFET power MOSFET architecture for low on-resistance
Lead-free and halogen-free construction

Applications

Battery switch circuits
Power management systems
Small form factor electronic devices

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering suffix matches project requirements. Review the latest datasheet revision for any updates to electrical characteristics or thermal ratings before finalizing procurement specifications.

Selection Notes

Evaluate the required operating voltage against the 30 V drain-source limit. Ensure the PCB layout accommodates the TSSOP-8 footprint and provides adequate copper area for thermal dissipation via the drain pins. Consider the gate threshold voltage when designing the drive circuitry for optimal switching performance.

Part Context

This component belongs to the Vishay Siliconix LITTLE FOOT series, designed to provide high-density power solutions in standard IC packages. The TSSOP-8 variant reduces board space compared to traditional SOIC packages while maintaining effective heat transfer capabilities through its custom leadframe design.