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The SI6955DQ is a P-channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. It features a low on-resistance of 12 milliohms at a gate-source voltage of 10 volts and a drain-source voltage of 4.5 volts. The device supports a continuous drain current of 38 amperes and a pulsed drain current of 152 amperes. It operates with a maximum drain-source voltage of -30 volts and a maximum gate-source voltage of ±20 volts. The component utilizes an 8-lead DPAK surface-mount package, providing efficient thermal performance for power management applications requiring high current handling capabilities.
Verify the specific ordering suffix to ensure the correct tape and reel configuration matches your assembly requirements. Confirm that the manufacturer designation aligns with current corporate ownership structures following acquisitions. Check for updated marking codes or date codes to ensure authenticity and traceability during incoming inspection processes.
Evaluate the thermal resistance characteristics against your system's heat dissipation constraints. Ensure the gate drive voltage levels are compatible with the specified threshold voltages for reliable switching. Consider the package lead frame material and solderability requirements for your manufacturing process compatibility.
This component belongs to the PowerTrench series of MOSFETs designed for high-efficiency power switching. The DPAK package offers a balance between electrical performance and mechanical footprint suitable for board-level integration. It serves as a discrete solution for managing power flow in electronic systems where size and efficiency are critical factors.
Consult official cross-reference guides for direct replacements. Verify pinout compatibility and thermal specifications before substitution. Ensure voltage and current ratings meet or exceed original design requirements.