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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3.4A 8TSSOP
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.4A
- Rds On (Max) @ Id, Vgs：45mOhm @ 3.9A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The SI6963BDQ-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features an SOIC-8 surface-mount package and operates with a drain-source voltage of -20V and a continuous drain current of 4A. The device exhibits a maximum on-resistance of 58 milliohms at Vgs = -10V. Gate-source voltage limits are ±12V, with a threshold voltage of 600mV. Total gate charge is 26nC. Power dissipation reaches 3.1W, and the junction temperature range spans from -55°C to +150°C.
Feature Summary
- TrenchFET technology for optimized performance
- Dual-channel configuration in compact packaging
- Enhancement mode operation
Applications
- Power management circuits
- Load switching applications
- DC-DC converter output stages
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices. Ensure storage conditions meet moisture sensitivity level requirements before assembly. Validate part markings against official datasheet specifications to prevent counterfeit risks.
Selection Notes
Evaluate thermal resistance characteristics for heat dissipation requirements. Compare on-resistance values against circuit efficiency targets. Verify gate drive compatibility with available control voltages. Assess package thermal performance for intended operating environment constraints.
Part Context
This component belongs to the SI69 series of Vishay Siliconix power MOSFETs. The series emphasizes low on-resistance and fast switching capabilities. The specific model integrates dual P-channel devices in a single package for space-constrained designs.
Replacement Considerations
Consult official replacement lists for discontinued components. Verify pinout compatibility and electrical parameter equivalence before substitution. Check package dimensions for mechanical fit.
