SI6966DQ-T1-GE3

Overview

The SI6966DQ-T1-GE3 is a P-channel MOSFET manufactured by Vishay / Siliconix. It utilizes TrenchFET technology and is housed in an MSOP-10 surface-mount package. The device supports single supply operation with a drain-source voltage rating of -20 V and a continuous drain current of -5.8 A. Key electrical characteristics include a maximum on-resistance of 45 mOhms at a gate-source voltage of -10 V, a gate charge of 7 nC, and a power dissipation capacity of 1.5 W. The component operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

• Incorporates TrenchFET planar technology for enhanced performance metrics.

Applications

• Power management circuits requiring low-side switching.

Procurement Notes

Verify the obsolete status before integration into new designs. Confirm RoHS compliance details through official documentation. Ensure the MSOP-10 package footprint matches the target PCB layout. Validate thermal requirements against the specified power dissipation limits during operation.

Selection Notes

Select this component for applications necessitating a P-channel configuration in compact surface-mount form factors. Evaluate the -20 V rating against system voltage peaks. Consider the 45 mOhm on-resistance for efficiency calculations in low-current scenarios.

Part Context

This part belongs to the SI6 series of MOSFETs from Vishay / Siliconix. It shares the TrenchFET technology platform with other devices in the lineup but differs in voltage ratings and package configurations. The specific suffix indicates tape and reel packaging.

Replacement Considerations

Public sources list SI6966DQ-GE3 as an alias. Verify functional equivalence and package compatibility before substitution. No other direct substitutes are confirmed in available public data.