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Product Detailed Parameters
- Description：MOSFET 2P-CH 8V 8TSSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：8V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：30mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：40nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The SI6967DQ-T1-E3 is a dual N-channel power MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in an 8-pin TSSOP surface-mount package. The device features a drain-source breakdown voltage of 8 V and supports a continuous drain current of 5 A. Its maximum on-resistance is specified at 0.03 ohms. The component operates in enhancement mode with a maximum junction temperature rating of 150 °C.
Feature Summary
- Dual channel configuration integrated into a single compact package
- TrenchFET technology for optimized low on-resistance performance
- Enhancement mode operation suitable for general-purpose switching applications
Applications
- General purpose power switching circuits
- Low voltage DC-DC converter stages
- Battery protection and management systems
Procurement Notes
Verify the specific suffix E3 to confirm lead-free compliance and RoHS status before integration. Confirm the TSSOP-8 pinout matches your PCB footprint design. Check current availability as this component may be subject to discontinuation or limited stock conditions from authorized distributors.
Selection Notes
Select this part when a dual N-channel solution is required within a small form factor. Ensure the 8 V voltage rating meets your circuit requirements. Verify that the 0.03 ohm on-resistance provides acceptable conduction losses for your load current. Consider thermal dissipation capabilities in the TSSOP-8 package for your specific application environment.
Part Context
This component belongs to the SI6 series of power MOSFETs from Vishay Siliconix. It shares the TrenchFET platform characteristics with other devices in the family but offers a specific dual-channel configuration in a TSSOP-8 package. This distinguishes it from single-channel variants or those in different package styles like SOT-23 or DPAK.
Replacement Considerations
Consult official Vishay documentation for direct replacements. Potential alternatives include other dual N-channel MOSFETs in TSSOP-8 packages with similar 8 V ratings and low Rds(on). Verify pin compatibility and electrical parameters before substitution.
