SI7113DN-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI7113DN-T1-GE3 is a P-channel MOSFET utilizing TrenchFET technology. It features a -100 V drain-source voltage and a maximum continuous drain current of -13.2 A at TC = 25 °C. The device exhibits an on-state resistance of 0.134 Ω at VGS = -10 V and -4 A, or 0.145 Ω at VGS = -4.5 V and -3 A. Total gate charge is typically 16.5 nC at VGS = -4.5 V. It operates within a junction temperature range of -50 to +150 °C and is housed in a leadless PowerPAK 1212-8 package.

Single FETs, MOSFETs Feature Summary

• TrenchFET power MOSFET technology for optimized performance
• Low thermal resistance PowerPAK 1212-8 package with small size and low profile
• Halogen-free option available

Single FETs, MOSFETs Applications

• Active clamp circuits in intermediate DC/DC power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance as defined by Vishay. Confirm the component status, as availability may be limited. Validate that the PowerPAK 1212-8 package dimensions align with the target PCB footprint requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a single P-channel switch with high voltage tolerance. Ensure the gate drive voltage meets the specified thresholds for optimal on-resistance. Consider the thermal management capabilities of the PowerPAK 1212-8 package when designing the heat dissipation strategy for the system.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si7113 series of P-channel MOSFETs. It is manufactured using silicon technology and utilizes the PowerPAK 1212-8 surface-mount package. The device is designed for general-purpose switching applications where low thermal impedance and compact form factor are required.

Single FETs, MOSFETs Replacement Considerations

Consult official datasheets for direct pin-compatible alternatives within the Vishay portfolio. Verify electrical parameters such as breakdown voltage and on-resistance match the original design requirements before substituting.