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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4.6A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.6A
- Rds On (Max) @ Id, Vgs：40mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7214DN-T1-E3 is a dual N-Channel MOSFET utilizing TrenchFET technology, housed in a PowerPAK 1212-8 surface-mount package. It features a drain-source voltage (VDS) of 30 V and a gate-source voltage (VGS) of ±20 V. The device provides a maximum on-state resistance (RDS(on)) of 0.04 Ω at VGS = 10 V with a continuous drain current (ID) of 6.4 A, or 0.047 Ω at VGS = 4.5 V with an ID of 5.9 A. Key dynamic parameters include a total gate charge (Qg) of 4.2 nC, a turn-on delay time of 7.1 ns, and a fall time of 6 ns. Thermal ratings specify a maximum power dissipation of 2.6 W at 25 °C and a junction-to-case thermal resistance of 4.3 °C/W.
Feature Summary
- Dual N-Channel configuration within a compact PowerPAK 1212-8 footprint
- TrenchFET technology optimized for high efficiency applications
- Halogen-free construction compliant with IEC 61249-2-21 standards
Applications
- Synchronous rectification circuits
- High efficiency power conversion designs
Procurement Notes
Verify the specific ordering suffix when sourcing components. The SI7214DN-T1-E3 designation indicates a lead-free product. Confirm whether halogen-free compliance is required for the project, as this corresponds to the GE3 suffix variant. Ensure that the procurement documentation matches the exact part number to avoid discrepancies in material specifications.
Selection Notes
Select this component for space-constrained designs requiring dual N-channel switching capabilities. The low thermal impedance of the PowerPAK 1212-8 package supports efficient heat dissipation relative to its small footprint. Evaluate the 30 V rating against system voltage requirements and ensure the gate drive voltage aligns with the specified RDS(on) performance thresholds.
Part Context
This component belongs to the Vishay Siliconix Si72 series of dual MOSFETs. It shares the PowerPAK 1212-8 package form factor with other devices in the lineup but is distinguished by its specific 30 V breakdown voltage and dual-channel architecture. The TrenchFET process technology differentiates it from standard planar MOSFETs.
Replacement Considerations
Direct functional replacements must match the dual N-channel topology, 30 V rating, and PowerPAK 1212-8 pinout. Verify that any substitute maintains equivalent thermal resistance and gate charge characteristics to preserve circuit timing and efficiency.
FAQ
What is the difference between the SI7214DN-T1-E3 and SI7214DN-T1-GE3?
The SI7214DN-T1-E3 is a lead-free version of the component. The SI7214DN-T1-GE3 variant includes both lead-free and halogen-free construction.
How does the gate-source voltage affect the on-state resistance?
The on-state resistance increases as the gate-source voltage decreases. At VGS = 10 V, RDS(on) is typically 0.04 Ω, while at VGS = 4.5 V, it rises to 0.047 Ω.
