SI7218DN-T1-E3

Overview

The Si7218DN-T1-E3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a PowerPAK 1212-8 surface-mount package with a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 24 A at TC = 25 °C. The typical on-state resistance (RDS(on)) is 25 mΩ at VGS = 10 V and 33 mΩ at VGS = 4.5 V. Total gate charge (Qg) is typically 11 nC at VGS = 10 V. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration in a compact leadless PowerPAK 1212-8 package
• TrenchFET power MOSFET technology for low on-resistance
• Halogen-free construction according to IEC 61249-2-21

Applications

• Synchronous rectification
• Notebook system power
• Point-of-load (POL) conversion

Procurement Notes

Verify the specific ordering suffix when sourcing components. The -E3 suffix indicates lead-free status, while the -GE3 variant additionally meets halogen-free requirements per IEC 61249-2-21. Confirm that the exact part number matches the required environmental compliance specifications before procurement.

Selection Notes

Select this component for applications requiring dual N-channel switching in space-constrained designs. The PowerPAK 1212-8 package offers superior thermal performance compared to standard SO-8 packages. Ensure adequate PCB copper area is allocated to the drain pad to maintain optimal thermal dissipation and minimize junction-to-ambient resistance.

Part Context

This component belongs to the Vishay Siliconix Si7218 series of dual N-channel MOSFETs. It is manufactured using TrenchFET technology and is housed in the PowerPAK 1212-8 package. The product line targets synchronous rectification and point-of-load applications where high efficiency and small footprint are critical design parameters.

Replacement Considerations

The Si7218DN-T1-GE3 serves as a verified alternative offering identical electrical characteristics with additional halogen-free compliance.