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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 60A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：60A
- Rds On (Max) @ Id, Vgs：5.2mOhm @ 20.7A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：105nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：4000pF @ 10V
- Power - Max：46W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7236DP-T1-E3 is a dual N-channel 20 V (D-S) MOSFET utilizing TrenchFET power technology. It is housed in a PowerPAK SO-8 Dual package with an exposed drain pad for thermal management. The device features a maximum continuous drain current of 60 A at TC = 25 °C and a typical on-state resistance of 0.0052 Ω at VGS = 4.5 V. Operating junction temperature ranges from -55 to +150 °C, with a maximum junction-to-case thermal resistance of 2.7 °C/W.
Feature Summary
- Dual N-channel configuration within a single leadless PowerPAK SO-8 package
- TrenchFET power MOSFET technology for low on-resistance
- Exposed copper drain pad for direct thermal path to the substrate
Applications
- Synchronous rectification
- DC/DC point-of-load conversion
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm compliance status through the material categorization definitions provided in the datasheet. Ensure the ordering suffix matches the required lead-free specification before finalizing procurement records.
Selection Notes
Evaluate the specific gate-source voltage requirements, as the absolute maximum rating is ±12 V. Consider the thermal resistance characteristics when designing the PCB layout, particularly regarding the exposed drain pad area. Verify that the application current does not exceed the package-limited ratings under steady-state conditions.
Part Context
This component belongs to the Vishay Siliconix TrenchFET family, designed for high-efficiency switching applications. The PowerPAK SO-8 package provides a footprint compatible with standard SO-8 layouts while offering superior thermal performance comparable to larger DPAK packages.
Replacement Considerations
Direct pin-compatible replacements within the same series should be verified against the official Vishay substitution guide. Ensure any alternative device maintains the 20 V drain-source voltage rating and fits the PowerPAK SO-8 Dual outline.
