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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.4A PPAK SO8
- Series：LITTLE FOOT®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.4A
- Rds On (Max) @ Id, Vgs：22mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7872DP-T1-E3 is a dual N-channel MOSFET with an integrated Schottky diode, housed in a lead-free PowerPAK SO-8 package. It features a 30 V drain-source voltage (VDS) and supports up to 10 A continuous drain current at TA = 25 °C. The on-state resistance (RDS(on)) is typically 0.022 Ω at VGS = 10 V and 6.4 A. The device utilizes TrenchFET technology for optimized PWM performance. Thermal characteristics include a maximum junction-to-case resistance of 6.0 °C/W and a maximum operating junction temperature of 150 °C.
Feature Summary
- Dual N-channel MOSFET configuration with an integrated Schottky diode within a single compact PowerPAK SO-8 package.
- TrenchFET technology designed for low thermal resistance and optimized pulse-width modulation (PWM) switching performance.
- Lead-free construction compliant with RoHS standards, featuring a low-profile surface-mount design.
Applications
- Asymmetrical Buck-Boost DC/DC Converters
- Low-voltage power management circuits requiring synchronous rectification
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure compliance with required environmental standards. Confirm that the component matches the exact part number designation before procurement to avoid discrepancies in lead-free or halogen-free specifications.
Selection Notes
Select this component for applications requiring a combined high-current N-channel switch and freewheeling diode in a minimal footprint. Ensure the gate drive voltage aligns with the specified RDS(on) thresholds. Evaluate the thermal dissipation requirements against the provided junction-to-ambient resistance ratings for the target PCB layout.
Part Context
This component belongs to the Vishay Siliconix Si7872DP series, which integrates dual N-channel MOSFETs with a common source Schottky diode. The family is characterized by low on-resistance and fast switching speeds, utilizing advanced TrenchFET process technology to minimize conduction losses in synchronous rectifier topologies.
Replacement Considerations
Consult the manufacturer's datasheet for officially recommended alternative part numbers. Verify pinout compatibility and electrical parameter equivalence before substituting any other components.
FAQ
What is the maximum continuous drain current for the SI7872DP?
The maximum continuous drain current is 10 A at an ambient temperature of 25 °C and 6.4 A at 70 °C.
Does the package contain a Schottky diode?
Yes, the device integrates a Schottky diode between the source and drain terminals, rated for a forward current of 3.0 A.
What is the typical on-state resistance at VGS = 10 V?
The typical on-state resistance (RDS(on)) is 0.022 Ω when measured at a gate-source voltage of 10 V and a drain current of 7.5 A.
