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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.2A PPAK 1212
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.2A
- Rds On (Max) @ Id, Vgs：51mOhm @ 5.7A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The SI7911DN-T1-GE3 is a dual P-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK-1212-8 surface-mount package. The device features a drain-source voltage rating of 20 V and a continuous drain current of 6 A per channel. Its maximum on-resistance is specified at 25.5 mOhms, with a gate-source voltage limit of 8 V. The component supports an operating temperature range from -55°C to +150°C and has a power dissipation capacity of 19.8 W.
Feature Summary
- Dual P-channel configuration within a compact PowerPAK-1212-8 footprint
- TrenchFET technology for optimized performance characteristics
- Enhanced mode operation suitable for low-voltage switching applications
Applications
- Low-side load switching circuits
- Power management modules requiring dual P-channel control
- Battery protection systems
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact specifications. Confirm RoHS compliance status through authorized channels. Check current lifecycle status as availability may vary. Ensure the supplier provides valid traceability documents matching the part number exactly.
Selection Notes
Select this component when a dual P-channel solution is required in a small outline package. Evaluate the 25.5 mOhm on-resistance against thermal requirements. Consider the 20 V rating for compatibility with system voltage levels. Verify that the PowerPAK-1212-8 dimensions fit the target PCB layout constraints.
Part Context
This part belongs to the Vishay Siliconix SI79 series of dual MOSFETs. It shares the PowerPAK-1212-8 package form factor with other devices in the family. The series targets applications needing multiple switches in minimal board space.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the dual P-channel configuration and PowerPAK-1212-8 package.
