SI7923DN-T1-E3

$1.96

Description：MOSFET 2P-CH 30V 4.3A PPAK 1212
Series：TrenchFET®

SKU:2d2bbeab6b9d Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 4.3A PPAK 1212
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4.3A
Rds On (Max) @ Id, Vgs：47mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® 1212-8 Dual
Supplier Device Package：PowerPAK® 1212-8 Dual
Grade：-
Qualification：-

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SI7923DN-T1-E3

Overview

The Vishay Siliconix Si7923DN-T1-E3 is a dual P-Channel enhancement mode MOSFET utilizing TrenchFET technology. It features a PowerPAK 1212-8 surface-mount package with two independent channels. The device supports a drain-source voltage of -30 V and offers low on-state resistance, specified as 0.047 Ω at VGS = -10 V and ID = -6.4 A, or 0.075 Ω at VGS = -4.5 V and ID = -5 A. Continuous drain current ratings are -6.4 A at TA = 25 °C and -4.3 A at TA = 85 °C. Maximum power dissipation reaches 2.8 W at 25 °C. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

Dual-channel configuration within a compact PowerPAK 1212-8 footprint
TrenchFET architecture for optimized switching performance
Low thermal resistance design for efficient heat dissipation

Applications

Battery switch circuits in portable devices
Load switching applications
Space-constrained electronic designs requiring high thermal efficiency

Procurement Notes

Verify the specific ordering suffix when sourcing components. The Si7923DN-T1-E3 designation indicates lead-free construction. An alternative suffix, GE3, denotes both lead-free and halogen-free compliance according to IEC 61249-2-21 standards. Confirm the exact environmental specification required for the assembly process before procurement.

Selection Notes

Select this component for applications requiring dual P-Channel control in a minimal footprint. The PowerPAK 1212-8 package provides superior thermal performance compared to standard SO-8 or TSSOP-8 packages. Ensure the PCB layout utilizes adequate copper spreading on the drain pads to maximize heat dissipation capabilities and maintain optimal junction temperatures during operation.

Part Context

This part belongs to the Vishay Siliconix TrenchFET family of power MOSFETs. It is specifically designed to address space constraints while maintaining robust thermal characteristics. The PowerPAK 1212-8 package represents an evolution in surface-mount technology, offering a significantly smaller footprint than traditional SOIC packages while delivering comparable or better thermal management.