SI7946DP-T1-GE3

$3.49

Description：MOSFET 2N-CH 150V 2.1A PPAK SO8
Series：TrenchFET®

SKU:f554c7e5ce7a Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 150V 2.1A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：150V
Current - Continuous Drain (Id) @ 25°C：2.1A
Rds On (Max) @ Id, Vgs：150mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：-
Qualification：-

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SI7946DP-T1-GE3

Overview

The Vishay Siliconix Si7946DP-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, rated for a drain-source voltage of 150 V. It features a low thermal resistance PowerPAK SO-8 package designed for space savings and fast switching applications. The device offers an on-state resistance of 0.150 Ω at VGS = 10 V with a continuous drain current of 3.3 A. Key electrical parameters include a gate threshold voltage of 2.4 V typical, total gate charge of 12.6 nC typical, and forward transconductance of 9 S typical. It operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

Dual N-channel configuration for space savings
TrenchFET power MOSFET technology
Low thermal resistance PowerPAK SO-8 package
PWM optimized for fast switching

Applications

Primary side switch

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm halogen-free status and lead-free compliance. Ensure that the component matches the exact datasheet revision required for your design specifications. Cross-reference the manufacturer's part number with authorized distributors to confirm availability and authenticity before procurement.

Selection Notes

Select this component for designs requiring high-voltage isolation in a compact footprint. Evaluate the thermal performance based on the specified junction-to-ambient resistance values under your expected operating conditions. Confirm that the gate drive requirements align with the specified threshold voltage and gate charge characteristics for optimal switching efficiency.

Part Context

This component belongs to the Vishay Siliconix Si7946DP series of dual N-channel MOSFETs. It is manufactured using TrenchFET technology and housed in a PowerPAK SO-8 package. The product line emphasizes low thermal resistance and fast switching capabilities suitable for primary side switching applications.