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Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 3.2A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3.2A
- Rds On (Max) @ Id, Vgs：64mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7949DP-T1-E3 is a dual P-Channel MOSFET with a -60 V drain-source voltage rating. It utilizes TrenchFET technology and is housed in a leadless PowerPAK SO-8 package. The device features a maximum on-state resistance of 0.064 Ω at VGS = -10 V and 0.080 Ω at VGS = -4.5 V, supporting continuous drain currents of -5 A at 25 °C and -3.2 A at 70 °C. Total gate charge is typically 26 nC. Thermal performance includes a junction-to-case resistance of 3.3 °C/W (typical) and operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Dual P-Channel configuration utilizing TrenchFET power MOSFET technology
- Leadless PowerPAK SO-8 package with low profile for efficient thermal dissipation
- Halogen-free construction compliant with IEC 61249-2-21 standards
Applications
- DC-DC converter circuits
- Power management systems
- Load switching applications
Procurement Notes
Verify the specific ordering suffix against current manufacturer documentation to confirm compliance requirements. The -E3 designation indicates lead-free manufacturing. Confirm availability status directly with authorized distributors as product lifecycles may change. Ensure procurement channels are authorized to guarantee component authenticity and traceability.
Selection Notes
Select this component for designs requiring dual P-Channel switching with a -60 V breakdown voltage. Evaluate the 0.064 Ω on-resistance against load current requirements to manage conduction losses. Verify that the PowerPAK SO-8 footprint aligns with existing PCB land patterns. Consider the thermal resistance characteristics when designing heat dissipation strategies for high-current operations.
Part Context
This part belongs to the Vishay Siliconix SI7 series of power MOSFETs. It shares the PowerPAK SO-8 package form factor with other devices in the lineup but differs in channel type and voltage ratings. The dual-channel architecture allows for compact implementation of half-bridge or synchronous rectification topologies compared to single-channel alternatives.
Replacement Considerations
SI7949DP-T1-GE3 is the halogen-free variant of this component.
