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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 7.2A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：7.2A
- Rds On (Max) @ Id, Vgs：16.5mOhm @ 11.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The SI7958DP-T1-GE3 is a single N-channel enhancement mode MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK SO-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 40 A. Its maximum on-resistance (Rds(on)) is specified at 2.5 mΩ. The gate-source voltage limits are defined as -20 V to +20 V, with a typical threshold voltage (Vgs(th)) of 1 V. Additional electrical characteristics include a gate charge (Qg) of 56 nC and a power dissipation rating of 48 W. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Employs TrenchFET technology for optimized low on-resistance performance.
- Designed for high-efficiency switching applications with fast transient response capabilities.
- Utilizes the compact PowerPAK SO-8 package to maximize board space efficiency.
Applications
- DC-DC converter output stages
- Load switch circuits
- Power management modules
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to ensure compliance with environmental standards such as RoHS and REACH. Confirm that the requested part number matches the exact electrical specifications required for the target application circuit. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement orders.
Selection Notes
Select this component based on its 30 V rating and 40 A current capacity relative to system requirements. Evaluate the thermal performance provided by the PowerPAK SO-8 package against the expected power dissipation levels. Ensure the gate drive voltage aligns with the 1 V threshold and 20 V maximum limit for reliable switching operation.
Part Context
This component belongs to the SIR series of N-channel MOSFETs from Vishay Siliconix. It shares the PowerPAK SO-8 footprint with other devices in the family but differs in voltage and resistance ratings. The series is characterized by the use of advanced trench gate technology to achieve low Rds(on) values suitable for modern power electronics.
Replacement Considerations
Potential substitutes include the SI7858BDP-T1-GE3 or SI7858DP-T1-E3. Verify compatibility regarding pinout configuration, voltage ratings, and thermal characteristics before implementing any replacement strategy.
