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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 6.1A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：6.1A
- Rds On (Max) @ Id, Vgs：23mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7964DP-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in a leadless PowerPAK SO-8 package. It features a drain-source voltage of 60 V and a typical on-state resistance of 23 mΩ at VGS = 10 V. The device supports a continuous drain current of 9.6 A per channel at TA = 25 °C. Key dynamic parameters include a total gate charge of 43 nTypical and turn-on delay time of 20 ns. Thermal performance includes a maximum junction-to-case resistance of 2.7 °C/W. Operating temperature ranges from -55 °C to +150 °C.
Feature Summary
- Dual configuration for space savings
- TrenchFET power MOSFET technology
- Leadless PowerPAK SO-8 package with low thermal resistance
- Halogen-free construction
Applications
- Power management circuits requiring compact dual-switch solutions
- Low-voltage DC-DC converter topologies
- Load switching applications in portable electronics
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm halogen-free status. Confirm that the component meets RoHS directives before integration into regulated assemblies. Ensure proper handling procedures are followed due to the exposed copper terminals inherent to the leadless PowerPAK SO-8 package design.
Selection Notes
Select this component when a dual N-channel topology is required within a minimal footprint. Evaluate the 60 V rating against peak circuit voltages. Consider the 23 mΩ on-resistance for conduction loss calculations. Verify that the 9.6 A continuous current rating aligns with the thermal management strategy for the target application environment.
Part Context
This part belongs to the Vishay Siliconix Si7964DP series, specifically designed as a dual N-channel MOSFET solution. The product utilizes advanced TrenchFET technology to achieve low on-resistance within the compact PowerPAK SO-8 package. It serves as a specialized alternative to discrete single-channel configurations where board space is constrained.
Replacement Considerations
Direct substitutes must match the dual N-channel configuration, 60 V rating, and PowerPAK SO-8 package. Verify pinout compatibility and thermal characteristics. Cross-reference datasheets for equivalent RDS(on) and gate charge specifications to ensure circuit performance parity.
