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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 3.8A 6MICROFOOT
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.8A
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-MICRO FOOT®CSP
- Supplier Device Package：6-Micro Foot™ (2.36x1.56)
- Grade：-
- Qualification：-
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Overview
The SI8904EDB-T2-E1 is a single-channel P-Channel MOSFET from the Vishay Siliconix TrenchFET series, manufactured using silicon technology. It utilizes a MicroFoot-4 surface-mount package designed for compact circuit layouts. The device features a drain-source breakdown voltage of 20 V and a continuous drain current rating of 5.4 A at 25°C. Key electrical parameters include a maximum on-resistance of 36 mΩ at a gate-source voltage of -4.5 V, with a gate charge of 27 nC. The component supports an operating temperature range from -55°C to +150°C and offers a power dissipation capacity of 1.8 W.
Feature Summary
- Utilizes TrenchFET technology to achieve low on-resistance and efficient switching performance.
- Features a logic-level gate drive capability suitable for direct interface with standard digital control signals.
- Designed with a MicroFoot-4 package to provide high-density mounting solutions for space-constrained applications.
Applications
- High-side load switching in portable electronic devices
- Power management circuits in battery-operated systems
- DC-DC converter output stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure that the component version matches the design requirements for thermal and electrical performance.
Selection Notes
Select this component when a low-voltage P-Channel MOSFET with high current capability is required in a minimal footprint. Compare the 36 mΩ on-resistance and 5.4 A current rating against alternative packages to ensure thermal constraints are met within the MicroFoot-4 form factor. Verify that the 20 V drain-source voltage provides sufficient margin for the target application's supply rails.
Part Context
This part belongs to the SI8 series of TrenchFET MOSFETs from Vishay Siliconix, which focuses on optimizing the balance between on-resistance and gate charge for efficient power switching. The MicroFoot-4 package variant is specifically engineered for applications demanding high performance in extremely small surface-mount footprints compared to traditional SOT-23 or SC-70 packages.
Replacement Considerations
Consult the Vishay Siliconix cross-reference guide for verified equivalent parts. Potential substitutes may include other single-channel P-Channel MOSFETs with similar 20 V ratings and MicroFoot-4 packaging, provided pinouts and electrical characteristics align with the original design specifications.
